{"title":"一种165GHz OOK发射机,在65nm大块CMOS中具有10.6%的峰值dc - rf效率","authors":"Y. Ye, Bo Yu, Q. Gu","doi":"10.1109/MWSYM.2016.7540223","DOIUrl":null,"url":null,"abstract":"This paper presents a high efficiency 165 GHz OOK transmitter on a 65nm CMOS technology, including a transformer impedance optimization based fundamental cross-coupled oscillator followed by a high-speed and high on-off ratio SPST switch based modulator. The transmitter demonstrates the highest DC-to-RF efficiency (10.6%) beyond 140 GHz in silicon processes, with a high output power (0.66 dBm), a high on-off ratio (> 32 dB) and a low phase noise (-105.4 dBc/Hz @ 1 MHz offset). The standalone oscillator also demonstrates the record DC-to-RF efficiency of 25.9% beyond 140 GHz in silicon processes. The transmitter is designed compact with the core area of 240 μm × 130 μm.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 165GHz OOK transmitter with 10.6% peak DC-to-RF efficiency in 65nm bulk CMOS\",\"authors\":\"Y. Ye, Bo Yu, Q. Gu\",\"doi\":\"10.1109/MWSYM.2016.7540223\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a high efficiency 165 GHz OOK transmitter on a 65nm CMOS technology, including a transformer impedance optimization based fundamental cross-coupled oscillator followed by a high-speed and high on-off ratio SPST switch based modulator. The transmitter demonstrates the highest DC-to-RF efficiency (10.6%) beyond 140 GHz in silicon processes, with a high output power (0.66 dBm), a high on-off ratio (> 32 dB) and a low phase noise (-105.4 dBc/Hz @ 1 MHz offset). The standalone oscillator also demonstrates the record DC-to-RF efficiency of 25.9% beyond 140 GHz in silicon processes. The transmitter is designed compact with the core area of 240 μm × 130 μm.\",\"PeriodicalId\":6554,\"journal\":{\"name\":\"2016 IEEE MTT-S International Microwave Symposium (IMS)\",\"volume\":\"6 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2016.7540223\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2016.7540223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 165GHz OOK transmitter with 10.6% peak DC-to-RF efficiency in 65nm bulk CMOS
This paper presents a high efficiency 165 GHz OOK transmitter on a 65nm CMOS technology, including a transformer impedance optimization based fundamental cross-coupled oscillator followed by a high-speed and high on-off ratio SPST switch based modulator. The transmitter demonstrates the highest DC-to-RF efficiency (10.6%) beyond 140 GHz in silicon processes, with a high output power (0.66 dBm), a high on-off ratio (> 32 dB) and a low phase noise (-105.4 dBc/Hz @ 1 MHz offset). The standalone oscillator also demonstrates the record DC-to-RF efficiency of 25.9% beyond 140 GHz in silicon processes. The transmitter is designed compact with the core area of 240 μm × 130 μm.