统计性能建模与优化

Q1 Computer Science
Xin Li, Jiayong Le, L. Pileggi
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引用次数: 65

摘要

随着集成电路技术扩展到更精细的特征尺寸,控制相关的工艺变化变得越来越困难。制造工艺的波动越来越大,给电路性能带来了不可避免的重大不确定性;因此,确保可制造性已被确定为当今IC设计问题的首要任务之一。在本文中,我们回顾了最近开发的各种统计方法,用于模拟,分析和优化晶体管级和系统级的性能变化。以下主题将详细讨论:过程变化的来源,变化表征和建模,蒙特卡罗分析,响应面建模,统计定时和泄漏分析,概率分布提取,参数良率估计和鲁棒集成电路优化。这些技术提供了必要的CAD基础设施,促进了从确定性的、基于角落的IC设计向统计和概率设计的大胆转变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Statistical Performance Modeling and Optimization
As IC technologies scale to finer feature sizes, it becomes increasingly difficult to control the relative process variations. The increasing fluctuations in manufacturing processes have introduced unavoidable and significant uncertainty in circuit performance; hence ensuring manufacturability has been identified as one of the top priorities of today's IC design problems. In this paper, we review various statistical methodologies that have been recently developed to model, analyze, and optimize performance variations at both transistor level and system level. The following topics will be discussed in detail: sources of process variations, variation characterization and modeling, Monte Carlo analysis, response surface modeling, statistical timing and leakage analysis, probability distribution extraction, parametric yield estimation and robust IC optimization. These techniques provide the necessary CAD infrastructure that facilitates the bold move from deterministic, corner-based IC design toward statistical and probabilistic design.
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来源期刊
Foundations and Trends in Electronic Design Automation
Foundations and Trends in Electronic Design Automation ENGINEERING, ELECTRICAL & ELECTRONIC-
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期刊介绍: Foundations and Trends® in Electronic Design Automation publishes survey and tutorial articles in the following topics: - System Level Design - Behavioral Synthesis - Logic Design - Verification - Test - Physical Design - Circuit Level Design - Reconfigurable Systems - Analog Design Each issue of Foundations and Trends® in Electronic Design Automation comprises a 50-100 page monograph written by research leaders in the field.
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