肖特基势垒增强在n-InP太阳能电池中的应用

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520654

Thomas Clausen, O. Leistiko

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引用次数: 0

摘要

结果表明，采用AuZnCr金属化可以将n型InP上的肖特基势垒高度提高到接近能带隙(1.35 eV)的值。该工艺简单，只需要温度不超过500/spl℃的温和快速退火程序。此外，不需要关键的结外延生长步骤，使该过程相当便宜。因此，基于高抗辐射InP的高效、简单的空间应用太阳能电池器件结构的前景大大改善。

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Schottky barrier enhancement on n-InP solar cell applications

It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500/spl deg/C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved.

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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