Y. Yoon, H. Moyer, D. Kirby, R. Kubena, R. Joyce, R. Bowen, H. Nguyen, D. Chang
{"title":"超高频SiGe推挽式VCO MEMS振荡器","authors":"Y. Yoon, H. Moyer, D. Kirby, R. Kubena, R. Joyce, R. Bowen, H. Nguyen, D. Chang","doi":"10.1109/FCS.2015.7138795","DOIUrl":null,"url":null,"abstract":"UHF quartz MEMS oscillators operating at 813 MHz, 920 MHz and 1.048 GHz carrier frequencies utilizing a push-pull topology based on MOSIS SiGe 7WL technology have been demonstrated. The 1048 MHz resonator has an unloaded Q of 6,920 and a motional resistance of 31.7 ohms, as measured in a vacuum. This yields an fxQ product of 7.25×1012, close to the expected limit for quartz devices of 1×1013. Device phase noise was measured showing a minimum phase noise of -100 dBc/Hz for an 813 MHz oscillator at 1 kHz offset. A tuning range of 80 ppm was demonstrated at 920 MHz.","PeriodicalId":57667,"journal":{"name":"时间频率公报","volume":"17 1","pages":"76-80"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"UHF SiGe push-pull VCO MEMS oscillators\",\"authors\":\"Y. Yoon, H. Moyer, D. Kirby, R. Kubena, R. Joyce, R. Bowen, H. Nguyen, D. Chang\",\"doi\":\"10.1109/FCS.2015.7138795\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"UHF quartz MEMS oscillators operating at 813 MHz, 920 MHz and 1.048 GHz carrier frequencies utilizing a push-pull topology based on MOSIS SiGe 7WL technology have been demonstrated. The 1048 MHz resonator has an unloaded Q of 6,920 and a motional resistance of 31.7 ohms, as measured in a vacuum. This yields an fxQ product of 7.25×1012, close to the expected limit for quartz devices of 1×1013. Device phase noise was measured showing a minimum phase noise of -100 dBc/Hz for an 813 MHz oscillator at 1 kHz offset. A tuning range of 80 ppm was demonstrated at 920 MHz.\",\"PeriodicalId\":57667,\"journal\":{\"name\":\"时间频率公报\",\"volume\":\"17 1\",\"pages\":\"76-80\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"时间频率公报\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.1109/FCS.2015.7138795\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"时间频率公报","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.1109/FCS.2015.7138795","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
UHF quartz MEMS oscillators operating at 813 MHz, 920 MHz and 1.048 GHz carrier frequencies utilizing a push-pull topology based on MOSIS SiGe 7WL technology have been demonstrated. The 1048 MHz resonator has an unloaded Q of 6,920 and a motional resistance of 31.7 ohms, as measured in a vacuum. This yields an fxQ product of 7.25×1012, close to the expected limit for quartz devices of 1×1013. Device phase noise was measured showing a minimum phase noise of -100 dBc/Hz for an 813 MHz oscillator at 1 kHz offset. A tuning range of 80 ppm was demonstrated at 920 MHz.
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