氧在退火掺硅砷化镓中扩散的正电子湮没研究

Philosophical Magazine Part B Pub Date : 2002-11-01 DOI:10.1080/13642810208222942

A. Towner, M. Nathwani, A. Saleh, D. P. van der Werf, P. Rice-Evans

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摘要

摘要正电子湮没光谱已被应用于分子束外延生长的掺硅砷化镓。在930℃下退火SiO2包覆样品会导致SiGa-VGa空位带正电。二氧化硅帽导致氧气在表面下扩散，光谱导致了GaAs中氧气扩散系数的首次测量。新的分析程序ROYPROF的应用揭示了内部电场的产生。

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Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide

Abstract Positron annihilation spectroscopy has been applied to silicon-doped GaAs grown by molecular-beam epitaxy. Annealing SiO2 capped samples at 930°C causes the SiGa—VGa vacancies to become positively charged. The SiO2 caps cause oxygen to diffuse beneath the surface and the spectroscopy leads to the first measurement of the oxygen diffusion coefficient in GaAs. The application of a new analysis program ROYPROF reveals the creation of internal electric fields.

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Philosophical Magazine Part B

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