氧在退火掺硅砷化镓中扩散的正电子湮没研究

Philosophical Magazine Part B Pub Date : 2002-11-01 DOI:10.1080/13642810208222942

A. Towner, M. Nathwani, A. Saleh, D. P. van der Werf, P. Rice-Evans

{"title":"氧在退火掺硅砷化镓中扩散的正电子湮没研究","authors":"A. Towner, M. Nathwani, A. Saleh, D. P. van der Werf, P. Rice-Evans","doi":"10.1080/13642810208222942","DOIUrl":null,"url":null,"abstract":"Abstract Positron annihilation spectroscopy has been applied to silicon-doped GaAs grown by molecular-beam epitaxy. Annealing SiO2 capped samples at 930°C causes the SiGa—VGa vacancies to become positively charged. The SiO2 caps cause oxygen to diffuse beneath the surface and the spectroscopy leads to the first measurement of the oxygen diffusion coefficient in GaAs. The application of a new analysis program ROYPROF reveals the creation of internal electric fields.","PeriodicalId":20016,"journal":{"name":"Philosophical Magazine Part B","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide\",\"authors\":\"A. Towner, M. Nathwani, A. Saleh, D. P. van der Werf, P. Rice-Evans\",\"doi\":\"10.1080/13642810208222942\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Positron annihilation spectroscopy has been applied to silicon-doped GaAs grown by molecular-beam epitaxy. Annealing SiO2 capped samples at 930°C causes the SiGa—VGa vacancies to become positively charged. The SiO2 caps cause oxygen to diffuse beneath the surface and the spectroscopy leads to the first measurement of the oxygen diffusion coefficient in GaAs. The application of a new analysis program ROYPROF reveals the creation of internal electric fields.\",\"PeriodicalId\":20016,\"journal\":{\"name\":\"Philosophical Magazine Part B\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Philosophical Magazine Part B\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1080/13642810208222942\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Philosophical Magazine Part B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/13642810208222942","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

摘要正电子湮没光谱已被应用于分子束外延生长的掺硅砷化镓。在930℃下退火SiO2包覆样品会导致SiGa-VGa空位带正电。二氧化硅帽导致氧气在表面下扩散，光谱导致了GaAs中氧气扩散系数的首次测量。新的分析程序ROYPROF的应用揭示了内部电场的产生。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide

Abstract Positron annihilation spectroscopy has been applied to silicon-doped GaAs grown by molecular-beam epitaxy. Annealing SiO2 capped samples at 930°C causes the SiGa—VGa vacancies to become positively charged. The SiO2 caps cause oxygen to diffuse beneath the surface and the spectroscopy leads to the first measurement of the oxygen diffusion coefficient in GaAs. The application of a new analysis program ROYPROF reveals the creation of internal electric fields.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Philosophical Magazine Part B

自引率

0.00%

发文量