解释某些ccd暗电流温度依赖性的拟合参数

IF 0.1 0 THEATER
E. Bodegom, R. Widenhorn, D.A. lordache
{"title":"解释某些ccd暗电流温度依赖性的拟合参数","authors":"E. Bodegom, R. Widenhorn, D.A. lordache","doi":"10.1109/SMICND.2005.1558791","DOIUrl":null,"url":null,"abstract":"The experimental results concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed. It was found that the used theoretical model allows: (i) the evaluation of the lowest limit of experimental errors (involving the systematic ones), (ii) the study of Meyer-Neldel relations, pointing out the high correlation of diffusion dark currents with the energy-gap Eg, unlike the corresponding weak correlation of depletion dark currents (iii) rather accurate assignments of the obtained values of deep-level traps energies to some specific impurities","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Interpreting fitting parameters of temperature dependence of dark currents in some CCDs\",\"authors\":\"E. Bodegom, R. Widenhorn, D.A. lordache\",\"doi\":\"10.1109/SMICND.2005.1558791\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The experimental results concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed. It was found that the used theoretical model allows: (i) the evaluation of the lowest limit of experimental errors (involving the systematic ones), (ii) the study of Meyer-Neldel relations, pointing out the high correlation of diffusion dark currents with the energy-gap Eg, unlike the corresponding weak correlation of depletion dark currents (iii) rather accurate assignments of the obtained values of deep-level traps energies to some specific impurities\",\"PeriodicalId\":40779,\"journal\":{\"name\":\"Teatro e Storia\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.1000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Teatro e Storia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2005.1558791\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"THEATER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Teatro e Storia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2005.1558791","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"THEATER","Score":null,"Total":0}
引用次数: 1

摘要

分析了一些电荷耦合器件中暗电流温度依赖性的实验结果。发现所使用的理论模型允许:(i)评价实验误差的最低限度(包括系统误差);(ii)研究Meyer-Neldel关系,指出扩散暗流与能隙Eg的高度相关性,而不像耗尽暗流的相应弱相关性;(iii)将获得的深层陷阱能量值准确地分配给某些特定杂质
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interpreting fitting parameters of temperature dependence of dark currents in some CCDs
The experimental results concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed. It was found that the used theoretical model allows: (i) the evaluation of the lowest limit of experimental errors (involving the systematic ones), (ii) the study of Meyer-Neldel relations, pointing out the high correlation of diffusion dark currents with the energy-gap Eg, unlike the corresponding weak correlation of depletion dark currents (iii) rather accurate assignments of the obtained values of deep-level traps energies to some specific impurities
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Teatro e Storia
Teatro e Storia THEATER-
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