{"title":"晶圆转移工艺对STI CMP划痕的影响","authors":"Fan Bai, Zhijie Zhang, Jia Wang, Hongdi Wang","doi":"10.1109/CSTIC.2017.7919817","DOIUrl":null,"url":null,"abstract":"Shallow trench isolation chemical mechanical polishing (STICMP) technology has been widely applied in the fabrication of ultra large scale integrated (ULSI). In STI-CMP, the defect, topography control, thickness uniformity and so on are all so critical, especially, scratch defect is the major problem. Pad, disk, agglomerated slurry particles and foreign particles are the main sources of the tiny scratch. In this article, impact of transfer process on scratch during STI-CMP, such as pre CMP, bulk polish post treatment, and pre selective polish was studied. Variable down force, DIW rinse time, slurry flow rate, slurry buff treatment were verified respectively. It was found that the pre CMP slurry buff can reduce the scratch by 55%, and bulk polish post step with optimized buff condition also can reduce scratch by 30%. Besides, the backside clean also can reduce the scratch significantly.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"7 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Impact of wafer transfer process on STI CMP scratches\",\"authors\":\"Fan Bai, Zhijie Zhang, Jia Wang, Hongdi Wang\",\"doi\":\"10.1109/CSTIC.2017.7919817\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Shallow trench isolation chemical mechanical polishing (STICMP) technology has been widely applied in the fabrication of ultra large scale integrated (ULSI). In STI-CMP, the defect, topography control, thickness uniformity and so on are all so critical, especially, scratch defect is the major problem. Pad, disk, agglomerated slurry particles and foreign particles are the main sources of the tiny scratch. In this article, impact of transfer process on scratch during STI-CMP, such as pre CMP, bulk polish post treatment, and pre selective polish was studied. Variable down force, DIW rinse time, slurry flow rate, slurry buff treatment were verified respectively. It was found that the pre CMP slurry buff can reduce the scratch by 55%, and bulk polish post step with optimized buff condition also can reduce scratch by 30%. Besides, the backside clean also can reduce the scratch significantly.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"7 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919817\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919817","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of wafer transfer process on STI CMP scratches
Shallow trench isolation chemical mechanical polishing (STICMP) technology has been widely applied in the fabrication of ultra large scale integrated (ULSI). In STI-CMP, the defect, topography control, thickness uniformity and so on are all so critical, especially, scratch defect is the major problem. Pad, disk, agglomerated slurry particles and foreign particles are the main sources of the tiny scratch. In this article, impact of transfer process on scratch during STI-CMP, such as pre CMP, bulk polish post treatment, and pre selective polish was studied. Variable down force, DIW rinse time, slurry flow rate, slurry buff treatment were verified respectively. It was found that the pre CMP slurry buff can reduce the scratch by 55%, and bulk polish post step with optimized buff condition also can reduce scratch by 30%. Besides, the backside clean also can reduce the scratch significantly.
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