铜电铸UV LIGA技术

Hanyan Li, Xinghui Li, Guodong Bai, Jinjun Feng
{"title":"铜电铸UV LIGA技术","authors":"Hanyan Li, Xinghui Li, Guodong Bai, Jinjun Feng","doi":"10.1109/IVEC.2014.6857581","DOIUrl":null,"url":null,"abstract":"This paper investigates effects of current waveforms and densities on surface morphology and microstructural characterization of copper films. Comparing to the direct current (DC) waveform, the pulse waveform plating produces a fine, void-free grain copper structure. The grain size of copper films is 194 nm and copper films are capable of enduring high temperature without bubbles.","PeriodicalId":88890,"journal":{"name":"IEEE International Vacuum Electronics Conference. International Vacuum Electronics Conference","volume":"80 5 1","pages":"245-246"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Copper electroforming for UV LIGA technology\",\"authors\":\"Hanyan Li, Xinghui Li, Guodong Bai, Jinjun Feng\",\"doi\":\"10.1109/IVEC.2014.6857581\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates effects of current waveforms and densities on surface morphology and microstructural characterization of copper films. Comparing to the direct current (DC) waveform, the pulse waveform plating produces a fine, void-free grain copper structure. The grain size of copper films is 194 nm and copper films are capable of enduring high temperature without bubbles.\",\"PeriodicalId\":88890,\"journal\":{\"name\":\"IEEE International Vacuum Electronics Conference. International Vacuum Electronics Conference\",\"volume\":\"80 5 1\",\"pages\":\"245-246\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Vacuum Electronics Conference. International Vacuum Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVEC.2014.6857581\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Vacuum Electronics Conference. International Vacuum Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVEC.2014.6857581","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文研究了电流波形和电流密度对铜薄膜表面形貌和微观结构表征的影响。与直流(DC)波形相比,脉冲波形电镀产生了精细、无空洞的晶粒铜结构。铜膜的晶粒尺寸为194 nm,具有耐高温无气泡的特点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Copper electroforming for UV LIGA technology
This paper investigates effects of current waveforms and densities on surface morphology and microstructural characterization of copper films. Comparing to the direct current (DC) waveform, the pulse waveform plating produces a fine, void-free grain copper structure. The grain size of copper films is 194 nm and copper films are capable of enduring high temperature without bubbles.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信