一种新的闪存持久应力后数据保留机制

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843914

H. Kameyama, Y. Okuyama, S. Kamohara, K. Kubota, H. Kume, K. Okuyama, Y. Manabe, A. Nozoe, H. Uchida, M. Hidaka, K. Ogura

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引用次数: 40

摘要

我们提出了一个新的数据保留模型后的耐力应力，可以解释为两种保留机制的组合。一种固有的保留特性是由热离子发射控制的，在150℃以上占主导地位;另一种保留机制在85 ~ 125℃以下占主导地位，由异常SILC控制。我们已经阐明了跳跃传导模型可以很好地拟合市盈率循环后的数据保留特性。特别是，过量的P/E循环产生的陷阱的存在在保持寿命的温度依赖性中发挥了重要作用。

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A new data retention mechanism after endurance stress on flash memory

We propose a new data retention model after endurance stress that may be explained as a combination of two retention mechanisms. One inherent retention characteristic is ruled by thermionic emission and is dominant above 150 C. The other retention mechanism is dominant below 85 to 125 C and is controlled by anomalous SILC. We have clarified that the data retention properties after P/E cycling were well fitted by the hopping conduction model. In particular, the presence of traps generated by excessive P/E cycling played a significant role in the temperature dependence of the retention lifetime.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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