{"title":"用于EHF卫星通信地面终端的GaAs mmic","authors":"D. Hampel, A. Upton","doi":"10.1109/MILCOM.1988.13473","DOIUrl":null,"url":null,"abstract":"The authors address the potential uses of GaAs, MMICs, and their benefits, for EHF ground terminals. This assessment of GaAs MMICs (monolithic microwave integrated circuits), while concentrating on the analog RF front end, also includes some associated critical digital functions. Performance requirements and specific application areas, such as 20-GHz low-noise amplifiers and 44-GHz power amplifiers, are discussed and current state-of-the-art performance in low-noise high-electron-mobility transistors (HEMTs) and high efficiency pseudomorphic HEMTs is presented, along with projected performance improvements over the next five years.<<ETX>>","PeriodicalId":66166,"journal":{"name":"军事通信技术","volume":"66 1","pages":"737-741 vol.3"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"GaAs MMICs for EHF SATCOM ground terminals\",\"authors\":\"D. Hampel, A. Upton\",\"doi\":\"10.1109/MILCOM.1988.13473\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors address the potential uses of GaAs, MMICs, and their benefits, for EHF ground terminals. This assessment of GaAs MMICs (monolithic microwave integrated circuits), while concentrating on the analog RF front end, also includes some associated critical digital functions. Performance requirements and specific application areas, such as 20-GHz low-noise amplifiers and 44-GHz power amplifiers, are discussed and current state-of-the-art performance in low-noise high-electron-mobility transistors (HEMTs) and high efficiency pseudomorphic HEMTs is presented, along with projected performance improvements over the next five years.<<ETX>>\",\"PeriodicalId\":66166,\"journal\":{\"name\":\"军事通信技术\",\"volume\":\"66 1\",\"pages\":\"737-741 vol.3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"军事通信技术\",\"FirstCategoryId\":\"1093\",\"ListUrlMain\":\"https://doi.org/10.1109/MILCOM.1988.13473\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"军事通信技术","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.1109/MILCOM.1988.13473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The authors address the potential uses of GaAs, MMICs, and their benefits, for EHF ground terminals. This assessment of GaAs MMICs (monolithic microwave integrated circuits), while concentrating on the analog RF front end, also includes some associated critical digital functions. Performance requirements and specific application areas, such as 20-GHz low-noise amplifiers and 44-GHz power amplifiers, are discussed and current state-of-the-art performance in low-noise high-electron-mobility transistors (HEMTs) and high efficiency pseudomorphic HEMTs is presented, along with projected performance improvements over the next five years.<>
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