{"title":"半导体量子结构中的太赫兹动力学","authors":"S. Allen","doi":"10.1109/ICIMW.2002.1076046","DOIUrl":null,"url":null,"abstract":"The Terahertz part of the electromagnetic spectrum defines a gap in solid state technology. This is most apparent if one focuses on sources. In this presentation we review experiments with the UCSB free-electron laser that have revealed the rich phenomena related to photon assisted transport in semiconductor quantum transport devices and the use of quasi-optical arrays and waveguide structures to measure Terahertz admittance of electrically biased devices.","PeriodicalId":23431,"journal":{"name":"Twenty Seventh International Conference on Infrared and Millimeter Waves","volume":"22 1","pages":"Pl1-Pl2"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Terahertz dynamics in semiconductor quantum structures\",\"authors\":\"S. Allen\",\"doi\":\"10.1109/ICIMW.2002.1076046\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Terahertz part of the electromagnetic spectrum defines a gap in solid state technology. This is most apparent if one focuses on sources. In this presentation we review experiments with the UCSB free-electron laser that have revealed the rich phenomena related to photon assisted transport in semiconductor quantum transport devices and the use of quasi-optical arrays and waveguide structures to measure Terahertz admittance of electrically biased devices.\",\"PeriodicalId\":23431,\"journal\":{\"name\":\"Twenty Seventh International Conference on Infrared and Millimeter Waves\",\"volume\":\"22 1\",\"pages\":\"Pl1-Pl2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Twenty Seventh International Conference on Infrared and Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIMW.2002.1076046\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty Seventh International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2002.1076046","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Terahertz dynamics in semiconductor quantum structures
The Terahertz part of the electromagnetic spectrum defines a gap in solid state technology. This is most apparent if one focuses on sources. In this presentation we review experiments with the UCSB free-electron laser that have revealed the rich phenomena related to photon assisted transport in semiconductor quantum transport devices and the use of quasi-optical arrays and waveguide structures to measure Terahertz admittance of electrically biased devices.
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