40nm 2Mb ReRAM宏，使用自动成形和自动写入方案，成形时间减少85%，页面写入时间减少99%

2019 Symposium on VLSI Technology Pub Date : 2019-06-01 DOI:10.23919/VLSIT.2019.8776540

Yen-Cheng Chiu, Han-Wen Hu, Li-Ya Lai, Tsung-Yuan Huang, Hui-Yao Kao, K. Chang, M. Ho, Chung-Cheng Chou, Y. Chih, T. Chang, Meng-Fan Chang

{"title":"40nm 2Mb ReRAM宏，使用自动成形和自动写入方案，成形时间减少85%，页面写入时间减少99%","authors":"Yen-Cheng Chiu, Han-Wen Hu, Li-Ya Lai, Tsung-Yuan Huang, Hui-Yao Kao, K. Chang, M. Ho, Chung-Cheng Chou, Y. Chih, T. Chang, Meng-Fan Chang","doi":"10.23919/VLSIT.2019.8776540","DOIUrl":null,"url":null,"abstract":"This work proposes (1) an auto-forming (AF) scheme to shorten the macro forming time $(\\text{T}_{\\text{FM}-\\text{M}})$ and testing costs; (2) an auto-RESET (ARST) scheme to shorten page-RESET time $(\\text{T}_{\\text{W}-\\text{PAGE}-\\text{RST}})$ for expanding the applications of hidden-RESET operation in standby mode, and (3) an auto-SET (ASET) scheme to shorten page-write time $(\\text{T}_{\\text{W}-\\text{PAGE}})$ combined with hidden-RESET scheme. A fabricated 40nm 2Mb ReRAM macro achieved 85+% reduction in TFM-M, and $99+\\%$ reduction in $\\text{T}_{\\text{W}}-\\text{PAGE}$ for a page. For the first time, AF, ARST, and ASET schemes are demonstrated in silicon for ReRAM. Keywords: ReRAM, forming, page-write","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"58 1","pages":"T232-T233"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A 40nm 2Mb ReRAM Macro with 85% Reduction in FORMING Time and 99% Reduction in Page-Write Time Using Auto-FORMING and Auto-Write Schemes\",\"authors\":\"Yen-Cheng Chiu, Han-Wen Hu, Li-Ya Lai, Tsung-Yuan Huang, Hui-Yao Kao, K. Chang, M. Ho, Chung-Cheng Chou, Y. Chih, T. Chang, Meng-Fan Chang\",\"doi\":\"10.23919/VLSIT.2019.8776540\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work proposes (1) an auto-forming (AF) scheme to shorten the macro forming time $(\\\\text{T}_{\\\\text{FM}-\\\\text{M}})$ and testing costs; (2) an auto-RESET (ARST) scheme to shorten page-RESET time $(\\\\text{T}_{\\\\text{W}-\\\\text{PAGE}-\\\\text{RST}})$ for expanding the applications of hidden-RESET operation in standby mode, and (3) an auto-SET (ASET) scheme to shorten page-write time $(\\\\text{T}_{\\\\text{W}-\\\\text{PAGE}})$ combined with hidden-RESET scheme. A fabricated 40nm 2Mb ReRAM macro achieved 85+% reduction in TFM-M, and $99+\\\\%$ reduction in $\\\\text{T}_{\\\\text{W}}-\\\\text{PAGE}$ for a page. For the first time, AF, ARST, and ASET schemes are demonstrated in silicon for ReRAM. Keywords: ReRAM, forming, page-write\",\"PeriodicalId\":6752,\"journal\":{\"name\":\"2019 Symposium on VLSI Technology\",\"volume\":\"58 1\",\"pages\":\"T232-T233\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIT.2019.8776540\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

本文提出(1)一种自动成形(AF)方案，以缩短宏成形时间$(\text{T}_{\text{FM}-\text{M}})$和测试成本;(2)缩短页面重置时间的auto-RESET (ARST)方案$(\text{T}_{\text{W}-\text{PAGE}-\text{RST}})$用于扩展隐藏- reset操作在待机模式下的应用;(3)缩短页面写时间的auto-SET (ASET)方案$(\text{T}_{\text{W}-\text{PAGE}})$结合隐藏- reset方案。制作的40nm 2Mb ReRAM宏实现了TFM-M减少85% +%，$\text{T}_{\text{W}}-\text{PAGE}$减少99+ %$。AF、ARST和ASET方案首次在硅片上用于ReRAM。关键词:ReRAM，成形，页面写入

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A 40nm 2Mb ReRAM Macro with 85% Reduction in FORMING Time and 99% Reduction in Page-Write Time Using Auto-FORMING and Auto-Write Schemes

This work proposes (1) an auto-forming (AF) scheme to shorten the macro forming time $(\text{T}_{\text{FM}-\text{M}})$ and testing costs; (2) an auto-RESET (ARST) scheme to shorten page-RESET time $(\text{T}_{\text{W}-\text{PAGE}-\text{RST}})$ for expanding the applications of hidden-RESET operation in standby mode, and (3) an auto-SET (ASET) scheme to shorten page-write time $(\text{T}_{\text{W}-\text{PAGE}})$ combined with hidden-RESET scheme. A fabricated 40nm 2Mb ReRAM macro achieved 85+% reduction in TFM-M, and $99+\%$ reduction in $\text{T}_{\text{W}}-\text{PAGE}$ for a page. For the first time, AF, ARST, and ASET schemes are demonstrated in silicon for ReRAM. Keywords: ReRAM, forming, page-write

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2019 Symposium on VLSI Technology

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