常压和低压MOVPE表征InP/InGaAs/InGaAsP

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147415

I. Moerman, G. Coudenys, P. Demeester, J. Crawley

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引用次数: 2

摘要

介绍了低压和常压金属有机气相外延(MOVPE)生长未掺杂和掺杂InP、InGaAs和InGaAsP的生长结果和特性。介绍了未掺杂InP和InGaAs生长参数的优化。特别注意的是获得良好的形貌。讨论了InP、InGaAs、1.3 μ m和1.55 μ m季铵盐的H/sub /S和DEZ掺杂，以及S和Zn掺杂对压力和衬底取向的影响

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Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE

Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H/sub 2/S and DEZ doping of InP, InGaAs, and 1.3- mu m and 1.55- mu m quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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