不同测量技术对ZnO薄膜光带边缘的比较研究

Feng Li, Zhongquan Ma, Ling Shen, Bo He
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引用次数: 0

摘要

采用射频磁控溅射法制备了ZnO薄膜。利用光谱椭偏仪(SE)和透射反射测量(T&R)获得了吸收系数随入射光子能量的函数。SE决定的光吸收带隙为3.32 eV, T&R决定的光吸收带隙为3.26 eV。这种差异归因于SE仅探测薄膜表面,而T&R测量则探测大部分薄膜。同样的事实也可以用来解释,在光带边缘区,由SE决定的吸收系数小于由T&R决定的吸收系数。当入射光子能量大于光学带隙时,利用薄膜体中的显子跃迁来讨论吸收系数随入射光子能量的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparative Study on the Optical Band Edge of ZnO Films with Different Measurement Techniques
ZnO films were prepared by radio frequency (rf) magnetron sputtering. The absorption coefficients as a function of incident photon energy were obtained by means of spectroscopic ellipsometer (SE), as well as by using transmission and reflection measurement (T&R). The optical absorption band gap decided by SE is 3.32 eV, while that decided by T&R is 3.26 eV. The difference is ascribed to the fact that SE probes only the surface of films whereas the T&R measurement probes the bulk of the films. The same fact can also be used to explain that, at optical band edge region, the absorption coefficient decided by SE is lower than that decided by T&R. When the incident photon energy is larger than the optical band gap, exitonic transitions in the bulk of the films are used to discuss the change of the absorption coefficient vs. incident photon energy.
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