GaN肖特基势垒二极管整流电路损耗机理分析

2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications Pub Date : 2012-05-10 DOI:10.1109/IMWS.2012.6215780

K. Hayashino, K. Harauchi, Y. Iwasaki, K. Fukui, J. Ao, Y. Ohno

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引用次数: 9

摘要

通过对电路仿真结果的比较，建立了单并联整流电路效率的解析模型。该模型对整流电路的直流输出功率和损耗功率进行了估计，与电路仿真结果吻合较好。在此模型下，明确了信号频率和二极管电容的影响。

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Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode

Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.

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来源期刊

2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications

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