同缓冲层对形态、微结构和Al/Si胶片强度的影响(111)

А.А. Ломов, Д.М. Захаров, Михаил Александрович Тарасов, А. М. Чекушкин, А. А. Татаринцев, Данила Алексеевич Киселёв, Т.C. Ильина, А Е Селезнев
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引用次数: 0

摘要

本文介绍了室温磁控溅射制备铝膜的补充研究结果。在标准的Si(111)硅衬底上,在400℃的温度下,在衬底上生长了一层~20 nm的铝(同质缓冲层)。采用HRXRR、XRD、SEM、EDS、AFM和纳米压头(ASTM)等方法研究了Al膜的形貌、微观结构和硬度与基体表面状态的相互关系。结果表明,在衬底表面形成同质缓冲层,可以控制铝薄膜的结构和力学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Влияние гомобуферного слоя на морфологию, микроструктуру и твердость пленок Al/Si(111)
The results of complementary studies of Al films grown by magnetron sputtering at room temperature are presented. The films were obtained on standard Si(111) silicon substrates without and with a ~20 nm aluminum (homobuffer) layer preliminarily grown on their surface at 400°C. The interdependence of the morphology, microstructure, and hardness of Al films on the state of the substrate surface was studied by the HRXRR, XRD, SEM, EDS, AFM, and Nano Indenter (ASTM) methods. It is shown that the formation of homobuffer layers on the substrate surface makes it possible to control the structural and mechanical properties of thin aluminum films.
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