Tommaso Vincenzi, G. Schatzberger, A. Michalowska-Forsyth
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Program Time Effects on Total Ionizing Dose Tolerance of Sidewall Spacer Memory Bit Cell
This paper presents a charge-based Non-Volatile Memory device: the Sidewall Spacer. Multiple TSMC 55nm dies were tested up to 100krad to explore the effect of the programming time on data retention.
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