{"title":"基于cmos可积记忆横梁结构的内存算法改进","authors":"E. Linn, Heidemarie Schmidt","doi":"10.37394/232020.2021.1.12","DOIUrl":null,"url":null,"abstract":"Memristive computing will be advantageous in large-scale, highly parallel mixed-mode processing architectures because processing can be performed directly within memristive memory architectures and intrachip communication can be implemented by a memristive crossbar structure with reconfigurable logic gates. Here we report on the development of a new concept for in-memory adders, using XOR functionality. Exploited memristive crossbar structures are based on memristive complementary resistive switches, e.g. TaOx, and BiFeO3.","PeriodicalId":93382,"journal":{"name":"The international journal of evidence & proof","volume":"44 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advancing in-memory Arithmetic Based on CMOS-integrable Memristive Crossbar Structures\",\"authors\":\"E. Linn, Heidemarie Schmidt\",\"doi\":\"10.37394/232020.2021.1.12\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Memristive computing will be advantageous in large-scale, highly parallel mixed-mode processing architectures because processing can be performed directly within memristive memory architectures and intrachip communication can be implemented by a memristive crossbar structure with reconfigurable logic gates. Here we report on the development of a new concept for in-memory adders, using XOR functionality. Exploited memristive crossbar structures are based on memristive complementary resistive switches, e.g. TaOx, and BiFeO3.\",\"PeriodicalId\":93382,\"journal\":{\"name\":\"The international journal of evidence & proof\",\"volume\":\"44 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The international journal of evidence & proof\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37394/232020.2021.1.12\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The international journal of evidence & proof","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37394/232020.2021.1.12","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advancing in-memory Arithmetic Based on CMOS-integrable Memristive Crossbar Structures
Memristive computing will be advantageous in large-scale, highly parallel mixed-mode processing architectures because processing can be performed directly within memristive memory architectures and intrachip communication can be implemented by a memristive crossbar structure with reconfigurable logic gates. Here we report on the development of a new concept for in-memory adders, using XOR functionality. Exploited memristive crossbar structures are based on memristive complementary resistive switches, e.g. TaOx, and BiFeO3.