具有高准剪切模式机电耦合系数的P0-12高取向c轴23°倾斜ZnO薄膜

T. Matsuo, T. Yanagitani, M. Matsukawa, Y. Watanabe
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引用次数: 13

摘要

具有高机电耦合系数k′15的准剪切模式压电薄膜在剪切波换能器、剪切模式FBAR和SH-SAW器件中具有广泛的应用前景。c轴倾角为28°的理想ZnO单晶薄膜具有较高的k′15值,为0.38。在这项研究中,我们利用射频磁控溅射技术研究了c轴倾斜的ZnO薄膜,以获得足够的倾斜角和良好的晶体排列。重点研究了溅射沉积过程中衬底表面与靶表面之间的夹角。当薄膜沉积在与目标表面成90度的衬底上时,可获得较大的c轴倾角22.6°-26.2°。此外,小psi扫描FWHM值从6.7°到7.8°表明薄膜具有良好的晶体取向。最后,该薄膜的k′15值估计为0.26,这是c轴倾斜ZnO或AlN薄膜的最高值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
P0-12 Highly Oriented C-Axis 23° Tilted ZnO Films with High Quasi-Shear Mode Electromechanical Coupling Coefficients
A quasi-shear mode piezoelectric film with high electromechanical coupling coefficient k'15 is attractive for shear wave transducers, shear mode FBAR and SH-SAW devices. The single crystalline ideal ZnO film with c-axis-tilt angle of 28deg from the surface normal of the film has high k'15 value of 0.38. In this study, we have investigated c-axis-tilted ZnO films to obtain sufficient tilt angle and good crystalline alignment using RF magnetron sputtering technique. We focused on the angle between the substrate surface and target surface during the sputtering deposition. In case that the film was deposited on the substrate set at 90deg to the target surface, relatively large c-axis tilted angles of 22.6deg-26.2deg were obtained. Moreover, small psi - scan FWHM values from 6.7deg to 7.8deg of the film indicated good crystalline alignment. Finally, k'15 value of this film was estimated as 0.26, which was the highest value ever reported for c-axis-tilted ZnO or AlN films.
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