超薄氧化物和氮氧化物准击穿前后的演化分析

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843913

M. Okandan, S. Fonash, B. Maiti, H. Tseng, P. Tobin

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引用次数: 0

摘要

观察了30 /spl氩/(椭偏仪测量)炉生长氧化物和氮化氧样品在恒流应力作用下向准击穿的演化过程、退火行为和进一步准击穿后的响应。通过这些测量和退火，可以清楚地证明介电材料在磨损/失效阶段的固有行为。测试器件为NMOS晶体管，通道宽度为15 /spl mu/m，长度范围为15至0.225 /spl mu/m。

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Analysis of evolution to and beyond quasi-breakdown in ultra-thin oxide and oxynitride

Evolution to quasi-breakdown with constant current stressing, annealing behavior and response to further post-quasi-breakdown stressing are observed in 30 /spl Aring/ (measured by ellipsometry) furnace grown oxide and oxynitride samples. The innate behavior of the dielectrics is clearly demonstrated in the wear-out/failure stage with these measurements and anneals. Devices tested are NMOS transistors with channel width of 15 /spl mu/m and lengths ranging from 15 to 0.225 /spl mu/m.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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