Prakash Pitchappa, C. Ho, P. Kropelnicki, Chengkuo Lee
{"title":"互补超材料红外吸收剂","authors":"Prakash Pitchappa, C. Ho, P. Kropelnicki, Chengkuo Lee","doi":"10.1109/OMN.2013.6659100","DOIUrl":null,"url":null,"abstract":"Complementary metamaterial based infrared (IR) absorber using complementary metal oxide semiconductor (CMOS) compatible material is presented. The robustness of the proposed device is ensured by studying the effect of fabrication deviation on the device performance. The measured absorption was 70% in the near IR region. The complementary metamaterial absorber can be engineered to provide near unity absorption in IR region.","PeriodicalId":6334,"journal":{"name":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","volume":"1 1","pages":"143-144"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Complementary metamaterial infrared absorber\",\"authors\":\"Prakash Pitchappa, C. Ho, P. Kropelnicki, Chengkuo Lee\",\"doi\":\"10.1109/OMN.2013.6659100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Complementary metamaterial based infrared (IR) absorber using complementary metal oxide semiconductor (CMOS) compatible material is presented. The robustness of the proposed device is ensured by studying the effect of fabrication deviation on the device performance. The measured absorption was 70% in the near IR region. The complementary metamaterial absorber can be engineered to provide near unity absorption in IR region.\",\"PeriodicalId\":6334,\"journal\":{\"name\":\"2013 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"volume\":\"1 1\",\"pages\":\"143-144\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMN.2013.6659100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMN.2013.6659100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Complementary metamaterial based infrared (IR) absorber using complementary metal oxide semiconductor (CMOS) compatible material is presented. The robustness of the proposed device is ensured by studying the effect of fabrication deviation on the device performance. The measured absorption was 70% in the near IR region. The complementary metamaterial absorber can be engineered to provide near unity absorption in IR region.
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