衬底偏压溅射银纳米孪晶薄膜晶粒结构的热稳定性

Y. Lai, Po-Ching Wu, T. Chuang
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引用次数: 2

摘要

在本研究中,观察了有衬底偏置电压和无衬底偏置电压的银纳米孪晶薄膜在不同温度下时效1小时后的晶粒生长路径不同,导致热稳定性存在较大差异。采用FIB、EBSD和TEM对无衬底偏置电压和有衬底偏置电压的as -沉积银纳米孪晶薄膜进行了表征。结果表明:衬底偏置电压为-150 V时,银纳米孪晶薄膜的等轴细晶区更薄,(111)取向晶粒数量更多,垂直于柱状晶粒生长方向的纳米孪晶堆积更致密。在450℃时效1小时后,由于衬底偏置电压使晶体结构的晶格排列和致密化更好,除了有少量等轴晶粒生长外,组织基本保持不变。而在无衬底偏置电压的银纳米孪晶薄膜中,仅在250℃时效1小时后,就出现了严重的异常晶粒生长(AGG)。本研究为纳米孪晶薄膜热稳定性的差异提供了更好的理解,这些发现将有助于进一步应用的实验设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal Stability of Grain Structure for Ag Nanotwinned Films Sputtered With Substrate Bias
Abstract In this study, different grain growth paths after aging at various temperatures for 1 hour were observed in Ag nanotwinned thin films with and without substrate bias voltage, which led to large differences in thermal stability. As-deposited Ag nanotwinned thin films with and without substrate bias voltage were characterized by FIB, EBSD, and TEM, which revealed thinner equiaxial fine-grained regions, higher amounts of (111)-oriented grains and denser nanotwin stacking perpendicular to the growth direction of columnar grains in thin films with -150 V substrate bias voltage. Due to the better lattice arrangement and densification of the crystal structure due to substrate bias voltage, the microstructures remained almost unchanged, except for a little equiaxial grain growth, even after aging at 450°C for 1 hour. However, in the Ag nanotwinned thin film without substrate bias voltage, severe abnormal grain growth (AGG) occurred after aging at only 250°C for 1 hour. Better understanding of the differences in thermal stability in nanotwinned thin films is provided in this study, and the findings will be beneficial for experimental design for further applications.
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