采用半导体光放大器和光vlsi处理器的电子可调谐激光结构的演示

光通信研究 Pub Date : 2007-06-24 DOI:10.1109/COINACOFT.2007.4519113

C. Poh, Seung-Ryeol Lee, Yong-Tak Lee, K. Alameh

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引用次数: 0

摘要

介绍了一种采用光学超大规模集成电路(Opto-VLSI)处理器和半导体光放大器的1300nm电子可调谐激光器结构。波长调谐是通过重新配置光电VLSI处理器的全息衍射光栅来实现的，允许特定波长的激光通过半导体光放大器。实验证明了调谐范围为5.7 nm。

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Demonstration of Electronically-Tunable Laser Structure Employing a Semiconductor Optical Amplifier and an Opto-VLSI Processor

A 1300nm electronically-tunable laser structure employing an Opto-VLSI processor and a semiconductor optical amplifier is demonstrated. Wavelength tuning is realized by reconfiguring the holographic diffraction grating of an Opto- VLSI processor, allowing specific wavelengths to lase through the semiconductor optical amplifier. A tuning range of 5.7 nm is experimentally demonstrated.

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光通信研究

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