In2O3薄膜气体传感器的阻抗谱分析

2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1) Pub Date : 2012-03-07 DOI:10.1109/ISPTS.2012.6260922

C. Mariappan, E. Prabhu, K. I. Gnanasekar, V. Jayaraman, T. Gnanasekaran

{"title":"In2O3薄膜气体传感器的阻抗谱分析","authors":"C. Mariappan, E. Prabhu, K. I. Gnanasekar, V. Jayaraman, T. Gnanasekaran","doi":"10.1109/ISPTS.2012.6260922","DOIUrl":null,"url":null,"abstract":"In<inf>2</inf>O<inf>3</inf> thin film was fabricated using pulsed laser deposition technique. The structure and morphology of the thin film were characterized by X-ray diffraction and atomic force microscopy respectively. AC impedance of In<inf>2</inf>O<inf>3</inf> thin film gas sensor were investigated at different temperatures (275 – 425 °C) when exposed into clean air and air containing NO<inf>x</inf>. Significant NO<inf>x</inf> sensing characteristics of thin film were observed at 325 °C by ac impedance analysis. The resistance and capacitance of indium oxide film were increased in the presence of NO<inf>x</inf>. The mechanism for the increase of resistance and of capacitance is presented.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"94 1","pages":"200-203"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Impedance spectroscopy analysis of In2O3 thin film gas sensor\",\"authors\":\"C. Mariappan, E. Prabhu, K. I. Gnanasekar, V. Jayaraman, T. Gnanasekaran\",\"doi\":\"10.1109/ISPTS.2012.6260922\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In<inf>2</inf>O<inf>3</inf> thin film was fabricated using pulsed laser deposition technique. The structure and morphology of the thin film were characterized by X-ray diffraction and atomic force microscopy respectively. AC impedance of In<inf>2</inf>O<inf>3</inf> thin film gas sensor were investigated at different temperatures (275 – 425 °C) when exposed into clean air and air containing NO<inf>x</inf>. Significant NO<inf>x</inf> sensing characteristics of thin film were observed at 325 °C by ac impedance analysis. The resistance and capacitance of indium oxide film were increased in the presence of NO<inf>x</inf>. The mechanism for the increase of resistance and of capacitance is presented.\",\"PeriodicalId\":6431,\"journal\":{\"name\":\"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)\",\"volume\":\"94 1\",\"pages\":\"200-203\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPTS.2012.6260922\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPTS.2012.6260922","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用脉冲激光沉积技术制备了In2O3薄膜。用x射线衍射和原子力显微镜对薄膜的结构和形貌进行了表征。研究了不同温度下(275 ~ 425℃)暴露在洁净空气和含NOx空气中的In2O3薄膜气体传感器的交流阻抗。通过交流阻抗分析，发现薄膜在325°C时具有明显的NOx感应特性。在NOx的存在下，氧化铟膜的电阻和电容量均有所增加。给出了电阻和电容增大的机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Impedance spectroscopy analysis of In2O3 thin film gas sensor

In2O3 thin film was fabricated using pulsed laser deposition technique. The structure and morphology of the thin film were characterized by X-ray diffraction and atomic force microscopy respectively. AC impedance of In2O3 thin film gas sensor were investigated at different temperatures (275 – 425 °C) when exposed into clean air and air containing NOx. Significant NOx sensing characteristics of thin film were observed at 325 °C by ac impedance analysis. The resistance and capacitance of indium oxide film were increased in the presence of NOx. The mechanism for the increase of resistance and of capacitance is presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)

自引率

0.00%

发文量