一个简洁精确的栅极延迟EDA仿真模型

Zhipeng Yue, Zhuoquan Huang, Dihu Chen, Tao Su
{"title":"一个简洁精确的栅极延迟EDA仿真模型","authors":"Zhipeng Yue, Zhuoquan Huang, Dihu Chen, Tao Su","doi":"10.1109/CSTIC.2017.7919892","DOIUrl":null,"url":null,"abstract":"This paper considers the relationship between the static gate delay and the supply voltage of the digital integrated circuit. An empirical equation with physical implication is proposed for calculating the static gate delay. The expression of the gate delay is very simple. It contains only three constants. The calculation includes only one subtraction step, one division step and one addition step. Transistor level simulations are performed to verify the equation. The model matches the experiment results precisely. It is valid for various technologies, gate types, and operation temperatures. The equation can be applied in EDA tools to simulate the timing of the circuit under the PVT variation and the electromagnetic interference.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A concise and precise model of the gate delay for EDA simulation\",\"authors\":\"Zhipeng Yue, Zhuoquan Huang, Dihu Chen, Tao Su\",\"doi\":\"10.1109/CSTIC.2017.7919892\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper considers the relationship between the static gate delay and the supply voltage of the digital integrated circuit. An empirical equation with physical implication is proposed for calculating the static gate delay. The expression of the gate delay is very simple. It contains only three constants. The calculation includes only one subtraction step, one division step and one addition step. Transistor level simulations are performed to verify the equation. The model matches the experiment results precisely. It is valid for various technologies, gate types, and operation temperatures. The equation can be applied in EDA tools to simulate the timing of the circuit under the PVT variation and the electromagnetic interference.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"1 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919892\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文研究了数字集成电路的静态门延迟与电源电压的关系。提出了一个具有物理意义的计算静态栅极延迟的经验方程。门延迟的表达式很简单。它只包含三个常量。计算只包括一个减法步骤、一个除法步骤和一个加法步骤。进行了晶体管级仿真以验证该方程。模型与实验结果吻合较好。它适用于各种技术、栅极类型和操作温度。该方程可以应用于EDA工具,模拟电路在PVT变化和电磁干扰下的时序。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A concise and precise model of the gate delay for EDA simulation
This paper considers the relationship between the static gate delay and the supply voltage of the digital integrated circuit. An empirical equation with physical implication is proposed for calculating the static gate delay. The expression of the gate delay is very simple. It contains only three constants. The calculation includes only one subtraction step, one division step and one addition step. Transistor level simulations are performed to verify the equation. The model matches the experiment results precisely. It is valid for various technologies, gate types, and operation temperatures. The equation can be applied in EDA tools to simulate the timing of the circuit under the PVT variation and the electromagnetic interference.
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