用于压电mems的溅射ScAlN薄膜中异常晶粒的微观结构演变

Minghua Li, J. Xie, Bangtao Chen, Nan Wang, Yao Zhu
{"title":"用于压电mems的溅射ScAlN薄膜中异常晶粒的微观结构演变","authors":"Minghua Li, J. Xie, Bangtao Chen, Nan Wang, Yao Zhu","doi":"10.1109/ULTSYM.2019.8926009","DOIUrl":null,"url":null,"abstract":"Scandium aluminum nitride (ScAlN) thin film has received wide attention for high performance piezo-MEMS device development. This work studies the large-size abnormal grains in the reactive sputtered ScAlN films. Our experimental results prove the abnormal grain nucleates in the normal film matrix and grows larger along the film thickness direction. The local in-plane strain induced by the lattice deformation results in atomic stacking fault, which is suggested to drive the abnormal nucleation.","PeriodicalId":6759,"journal":{"name":"2019 IEEE International Ultrasonics Symposium (IUS)","volume":"5 1","pages":"1124-1126"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Microstructural evolution of the abnormal crystallite grains in sputtered ScAlN film for piezo-MEMS applications\",\"authors\":\"Minghua Li, J. Xie, Bangtao Chen, Nan Wang, Yao Zhu\",\"doi\":\"10.1109/ULTSYM.2019.8926009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Scandium aluminum nitride (ScAlN) thin film has received wide attention for high performance piezo-MEMS device development. This work studies the large-size abnormal grains in the reactive sputtered ScAlN films. Our experimental results prove the abnormal grain nucleates in the normal film matrix and grows larger along the film thickness direction. The local in-plane strain induced by the lattice deformation results in atomic stacking fault, which is suggested to drive the abnormal nucleation.\",\"PeriodicalId\":6759,\"journal\":{\"name\":\"2019 IEEE International Ultrasonics Symposium (IUS)\",\"volume\":\"5 1\",\"pages\":\"1124-1126\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Ultrasonics Symposium (IUS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.2019.8926009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Ultrasonics Symposium (IUS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2019.8926009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

摘要

氮化钪铝(ScAlN)薄膜在高性能压电mems器件开发中受到广泛关注。本文研究了反应溅射ScAlN薄膜中的大尺寸异常晶粒。实验结果表明,异常晶粒在正常的膜基体中成核,并沿膜厚方向变大。晶格变形引起的局部面内应变导致原子层错,这是异常成核的驱动因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microstructural evolution of the abnormal crystallite grains in sputtered ScAlN film for piezo-MEMS applications
Scandium aluminum nitride (ScAlN) thin film has received wide attention for high performance piezo-MEMS device development. This work studies the large-size abnormal grains in the reactive sputtered ScAlN films. Our experimental results prove the abnormal grain nucleates in the normal film matrix and grows larger along the film thickness direction. The local in-plane strain induced by the lattice deformation results in atomic stacking fault, which is suggested to drive the abnormal nucleation.
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