BSIMPD:用于深亚微米CMOS设计的部分耗尽SOI MOSFET模型

P. Su, S. Fung, S. Tang, F. Assaderaghi, C. Hu
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引用次数: 32

摘要

BSIMPD是一种基于物理的SPICE模型,用于使用部分耗尽的SOI技术桥接深亚微米CMOS设计。BSIMPD是在行业标准的大块mosfet模型BSIM3v3的基础上制定的,具有良好的可扩展性和鲁棒性,通过其内置的浮体,自加热和身体接触模型捕获soi特定的动态行为。提出了一种参数提取策略,并对仿真效率进行了研究。该模型已在IBM内部对最先进的高速SOI技术进行了广泛测试。它已在许多电路模拟器中实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs
BSIMPD, a physics-based SPICE model, is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.
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