{"title":"铜线边缘粗糙度对28NM及以上先进工艺节点TDDB的影响","authors":"Dongyan Tao, Jinling Xu, Yanhui Sun, W. Chien, JS Chen, Guan Zhang","doi":"10.1109/CSTIC.2017.7919832","DOIUrl":null,"url":null,"abstract":"Ultra low-k films are used in advanced technologies as dielectric interlayers in Cu interconnects. Due to its high porosity, manufacturing reliable low-k films faces many challenges. This paper discusses the reliability of time dependent dielectric breakdown (TDDB). Degradation of the TDDB lifetime can be observed when there is an abnormal I–V breakdown. Our study characterized the interaction of the breakdown leakage to the etch profile. It has shown that the etch profile weak points have impacts on the TDDB lifetime. By characterizing the Cu etching profile and establishing inline correlations to its TDDB lifetime, a new evaluation method was identified to quickly and precisely reflect the TDDB lifetime performance.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"29 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of copper line-edge roughness on TDDB at advanced technology nodes of 28NM and beyond\",\"authors\":\"Dongyan Tao, Jinling Xu, Yanhui Sun, W. Chien, JS Chen, Guan Zhang\",\"doi\":\"10.1109/CSTIC.2017.7919832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultra low-k films are used in advanced technologies as dielectric interlayers in Cu interconnects. Due to its high porosity, manufacturing reliable low-k films faces many challenges. This paper discusses the reliability of time dependent dielectric breakdown (TDDB). Degradation of the TDDB lifetime can be observed when there is an abnormal I–V breakdown. Our study characterized the interaction of the breakdown leakage to the etch profile. It has shown that the etch profile weak points have impacts on the TDDB lifetime. By characterizing the Cu etching profile and establishing inline correlations to its TDDB lifetime, a new evaluation method was identified to quickly and precisely reflect the TDDB lifetime performance.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"29 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of copper line-edge roughness on TDDB at advanced technology nodes of 28NM and beyond
Ultra low-k films are used in advanced technologies as dielectric interlayers in Cu interconnects. Due to its high porosity, manufacturing reliable low-k films faces many challenges. This paper discusses the reliability of time dependent dielectric breakdown (TDDB). Degradation of the TDDB lifetime can be observed when there is an abnormal I–V breakdown. Our study characterized the interaction of the breakdown leakage to the etch profile. It has shown that the etch profile weak points have impacts on the TDDB lifetime. By characterizing the Cu etching profile and establishing inline correlations to its TDDB lifetime, a new evaluation method was identified to quickly and precisely reflect the TDDB lifetime performance.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
