Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons

The author, taking into account the non-uniformity of dissociation, the recombination of excitons in the depletion region, as well as the variability of the coefficients as a function of temperature, used dimensional analysis. Thus, by grouping together the physical parameters, dependent and independent variables, he generates dimensionless numbers. Among the latter, we have the ratio between the diffusion time and the lifetime of the charge carriers (Fourier number); the ratio between the imposed heat flux and that thermal conduction (heating factor) and the ratio between the mobility of the excitons and that of the electrons. The motivation of the author is on the one hand to show the influence of these dimensionless numbers on the diffusion lengths of the charge carriers and on the other hand their influence and that of the diffusion lengths on the total photocurrent density of the carriers. Therefore, he studied the effects of the mean temperature and those of the mobility ratio on the total density of the photocurrent. In order to carry out such work, the author opted for the finite volume method combined with an iterative line-by-line relaxation method of the Gauss-Seidel type as a method of solving his physical problem.