时域太赫兹光谱探测3d-5d界面的超快自旋电流和电荷转换

T. Dang, J. Hawecker, E. Rongione, G. B. Baez Flores, D. To, J. Rojas-Sánchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Sénéor, M. Bibes, A. Fert, M. Anane, J. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, K. Belashchenko, S. Dhillon, H. Jaffrès
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引用次数: 59

摘要

自旋电子结构因其自旋轨道转矩特性而被广泛研究,这是磁换向功能所必需的。目前这些材料的进展依赖于界面工程来优化自旋传输。在这里,我们提出了铁磁过渡金属界面上的超快自旋-电荷转换现象的分析,这是由于它们的逆自旋-霍尔效应性质。重点研究了pt基体系的本征逆自旋霍尔效应以及NiFe/Au:(W,Ta)双层中Au:W和Au:Ta的本征逆自旋霍尔效应。利用互补技术——太赫兹脉冲发射的动态超快时域光谱和稳态GHz频段的铁磁共振自旋泵浦测量——来探测自旋电荷转换,以确定材料特性、电阻率、金属界面的自旋传输和自旋翻转速率所起的作用。这些测量结果显示了不同样品的太赫兹时域谱与铁磁自旋泵浦在自旋混合电导方面的对应关系。后一个量是决定自旋电子界面太赫兹辐射强度的关键参数。这进一步得到了时域内多层载流子自旋扩散和自旋弛豫的ab-initio计算、模拟和分析的支持,从而确定了界面处自旋传输的主要趋势和作用。这项工作表明,基于自旋的太赫兹发射时域光谱是一种强大的技术,可以探测活性自旋电子界面的自旋动力学,并提取自旋电荷转换的关键材料特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy
Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pumping for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion.
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