222mW H.264全高清解码应用处理器,40nm x512b堆叠DRAM

Yu Kikuchi, Makoto Takahashi, T. Maeda, H. Hara, H. Arakida, H. Yamamoto, Y. Hagiwara, T. Fujita, Manabu Watanabe, T. Shimazawa, Y. Ohara, T. Miyamori, M. Hamada, Y. Oowaki
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引用次数: 16

摘要

如今的多媒体移动设备除了支持全高清(full - hd)视频处理外,还必须支持广泛的多媒体应用。传统的硬件引擎方法[1-3]不能处理芯片制造后可能需要的新应用。我们报告了一种具有混合架构的应用处理器,它将软件解决方案与多核处理器[4]相结合,用于各种应用,并将硬件解决方案与硬件引擎相结合,用于低功耗和特定的高性能任务,如全高清视频和3D图形。多媒体移动设备面临的另一个问题是如何以低功耗实现高内存带宽。SiP (System-in-Package)技术中的DDR内存连接需要大量的I/ o或高的接口频率,其代价是高功耗。使用微凸点[5]的芯片对芯片(CoC)连接是一种节能技术,可实现高内存带宽和低功耗。但是,在传统的CoC技术中,逻辑芯片和DRAM芯片之间的连接是在DRAM芯片的金属层上实现的,因此必须定制DRAM芯片。为了将DRAM芯片用于多个逻辑lsi,该应用处理器使用的堆叠芯片SoC (SCS)技术可以在组装/封装阶段重新布线,在重新分配层(RDL)上使用最小5微米间距的金属布线。我们还报告了一种芯片上的电源开关,其结构简单,可以抑制激流。应用处理器具有25个功率域,并对这些域进行精细控制,以优化各种性能要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 222mW H.264 Full-HD decoding application processor with x512b stacked DRAM in 40nm
Today's multimedia mobile devices must support a wide range of multimedia applications in addition to full high-definition (Full-HD) video processing. Conventional hardware engine approaches [1-3] cannot handle new applications that may be required once the chips are fabricated. We report an application processor with a hybrid architecture that combines a software solution with a multi-core processor [4] for various applications and a hardware solution with hardware engines for low-power and specific high-performance tasks such as Full-HD video and 3D graphics. Another issue faced in multimedia mobile devices is to achieve high memory bandwidth with low power consumption. DDR memory connections in System-in-Package (SiP) technologies need a large number of I/Os or high interface frequency at the expense of high power consumption. A Chip-on-Chip (CoC) connection using micro-bumps [5] is a power-efficient technology to achieve high memory bandwidth and low power. However, in the case of the conventional CoC technique, customized DRAM chips are necessary, because wiring between a logic chip and a DRAM chip is implemented on the metal layers in the DRAM chip. To use a DRAM chip for multiple logic LSIs, the Stacked-Chip SoC (SCS) technology used for this application processor enables rewiring at the assembly/packaging phase using minimum 5µm-pitch metal wiring on the Re-Distribution Layer (RDL). We also report an on-chip power switch with a simple structure that inhibits rush currents. The application processor has 25 power domains and controls these domains finely to optimize for various ranges of performance requirements.
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