RRAM技术的最新进展:从紧凑型到应用

Yue Zha, Zhiqiang Wei, J. Li
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引用次数: 2

摘要

我们回顾了近十年来RRAM技术的研究和发展进展,从紧凑模型到涉及应用。特别是,我们首先概述了为捕获RRAM的基本电气/化学/热特性(如IV特性,开关动力学,可变性和可靠性等)而开发的代表性紧凑型模型。然后,我们介绍了RRAM在传统应用中的产品开发和商业化进展,作为Flash的直接替代品,包括嵌入式和独立存储器,以及作为存储类存储器(SCM)的新兴应用。我们最后调查了使用RRAM开发替代非冯诺依曼架构的新兴领域的工作,开辟了内存和存储之外的广泛机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recent progress in RRAM technology: From compact models to applications
We survey the recent progress in the research and development of RRAM technology in the past decade, ranging from compact models to involving applications. In particular, we first present an overview of the representative compact models that have been developed to capture essential electrical/chemical/thermal properties of RRAM such as IV characteristics, switching dynamics, variability and reliability, etc. We then present the product development and commercialization progress of RRAM in traditional applications as a drop-in replacement to Flash including both embedded and standalone memory, and in emerging applications as storage class memory (SCM). We finally survey work in the nascent field of developing alternative non-Von Neumann architectures using RRAM, opening up broad opportunities beyond memory and storage.
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