第一性原理帮助建模来理解镉镉晶界的氯钝化

Akash Shah, A. Nicholson, A. Thiyagarajan, W. Sampath
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引用次数: 0

摘要

采用第一性原理方法对碲化镉(CdTe)(111)/(220)晶界进行了计算研究。CdTe基太阳能电池的氯化镉(CdCl2)处理已被证明对器件性能非常有益。已发表的文献表明在CdTe晶界的Te位点(ClTe)有氯的掺入。因此,密度泛函理论被用于确定CdCl2处理后CdTe器件性能增强的机制。计算模型解释了加入ClTe后通过场效应钝化形成局部p-n-p结,通过减轻界面处的复合,显著提高了CdTe器件的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First Principles assisted modeling to understand Chlorine passivation of CdTe grain boundary
A computational study on cadmium telluride (CdTe) (111)/(220) grain boundary was performed using a first-principles approach. Cadmium chloride (CdCl2) treatment of CdTe based solar cells has proven to be highly beneficial for device performance. Published literature suggests incorporation of chlorine at Te site (ClTe) in CdTe grain boundaries. Density Functional Theory was therefore used to identify the mechanisms responsible for enhancing CdTe device performance after CdCl2 treatment. The computational model explains the formation of local p-n-p junctions through field effect passivation after inclusion of ClTe, which significantly improves CdTe device performance by mitigating recombination at the interface.
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