体系和浮体结构对双栅垂直n-MOSFET的影响

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI:10.1063/1.3586972

N. Alias, M. Riyadi, K. Abdullah, R. Ismail

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引用次数: 0

摘要

在过去的几十年里，与平面MOSFET相比，垂直MOSFET的优势已经被公认为是MOSFET缩小到纳米级的替代方案。垂直mosfet的突出优点是更高的电流驱动，增强的短通道抗扰度，更高的可靠性和更高的封装密度，从而为缩放和先进设计提供了新的机会[1-2]。此外，双栅(DG)垂直mosfet降低了ses。在这个方向上最有前途的概念是双栅极和环绕栅极mosfet[3]。

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The influence of body-tied and floating-body structure in Double Gate Vertical n-MOSFET

The benefits of developing Vertical MOSFETs compared with Planar MOSFETs have been recognized for past decades as the alternative for MOSFET downscaling to nanoscale. The prominent advantages of vertical MOSFETs are higher current drive, enhanced short channel immunity, higher reliability and increased packing density, thus promising new opportunities for scaling and advanced design [1–2]. In addition, Double Gate (DG) Vertical MOSFETs reduced the SCEs. The most promising concepts in this direction are double and surround gate MOSFETs [3].

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2010 International Conference on Enabling Science and Nanotechnology (ESciNano)

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