{"title":"胶体CdTe量子点中涉及表面态的光致发光上转换","authors":"Xiaoyong Wang, Jiayu Zhang, M. Xiao","doi":"10.1109/QELS.2003.238521","DOIUrl":null,"url":null,"abstract":"Efficient photoluminescence up-conversion was observed in colloidal CdTe quantum dots with an energy gain of /spl sim/360 meV. We attribute this up-converted signal to the recombination of carriers from conduction band and hole surface states, respectively.","PeriodicalId":20418,"journal":{"name":"Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.","volume":"4 1","pages":"2 pp.-"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Photoluminescence up-conversion involving surface states in colloidal CdTe quantum dots\",\"authors\":\"Xiaoyong Wang, Jiayu Zhang, M. Xiao\",\"doi\":\"10.1109/QELS.2003.238521\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Efficient photoluminescence up-conversion was observed in colloidal CdTe quantum dots with an energy gain of /spl sim/360 meV. We attribute this up-converted signal to the recombination of carriers from conduction band and hole surface states, respectively.\",\"PeriodicalId\":20418,\"journal\":{\"name\":\"Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.\",\"volume\":\"4 1\",\"pages\":\"2 pp.-\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/QELS.2003.238521\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/QELS.2003.238521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoluminescence up-conversion involving surface states in colloidal CdTe quantum dots
Efficient photoluminescence up-conversion was observed in colloidal CdTe quantum dots with an energy gain of /spl sim/360 meV. We attribute this up-converted signal to the recombination of carriers from conduction band and hole surface states, respectively.
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