电沉积氧化二甲苯薄膜的电导率和光电响应

Junfu Liu , Zuhong Lu , Shiyong Zhao , Kongzhang Yang
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引用次数: 2

摘要

采用电沉积法制备了高导电性的多晶和非晶Tl2O3薄膜。多晶薄膜的电阻率低于非晶薄膜。该多晶薄膜的电阻率仅为3.2×10-4 Ω cm。发现电沉积的Tl2O3薄膜表现出n型半导体的光电响应。这种光电响应可以用于Tl2O3薄膜的进一步应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Conductivity and photoelectric response of electrodeposited thallic oxide films

Highly conductive polycrystalline and amorphous Tl2O3 films are prepared by electrodeposition method. The resistivity of the polycrystalline film is lower than that of the amorphous one. A resisitivity of only 3.2×10-4 Ω cm was obtained for the polycrystalline film. It is found that the electrodeposited Tl2O3 films exhibit photoelectric response of n-type semiconductors. This photoelectric response may find use for further application of the Tl2O3 films.

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