用于物联网应用的“外来”相变和铁电材料的薄膜加工

K. Suu, I. Kimura, H. Kobayashi, Y. Miyaguchi, T. Masuda, Y. Kokaze, T. Jimbo
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引用次数: 0

摘要

我们将报告我们的相变和铁电薄膜加工技术的发展成果,包括溅射,MOCVD和等离子体蚀刻以及PCRAM, FRAM和MEMS/传感器器件应用的制造工艺。相变材料和铁电材料等薄膜功能材料已被用于形成物联网(IoT)解决方案的先进半导体和电子器件。我们相信这些材料和设备的制造技术将有助于实现下一代智能社会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thin-film processing of “exotic” phase-change and ferroelectric materials for IoT applications
We will report our development results of phase-change and ferroelectric thin film processing technologies including sputtering, MOCVD and plasma etching as well as manufacturing processes for PCRAM, FRAM and MEMS/Sensor device applications. Thin-film functional material such as phase-change materials and ferroelectric materials have been utilized to form advanced semiconductor and electronic devices for internet of things (IoT) solutions. We are confident our manufacturing technologies for these materials and devices will contribute to realizing next generation Smart Society.
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