高性能GeSn光电二极管在200毫米绝缘体上的Ge光子平台上,用于先进的光电集成与2 μm波段的Ge CMOS

Shengqiang Xu, Kaizhen Han, Yi-Chiau Huang, Yuye Kang, S. Masudy‐Panah, Ying Wu, D. Lei, Yunshan Zhao, X. Gong, Y. Yeo
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引用次数: 1

摘要

我们报道了在200 mm GeOI平台上使用低温晶圆键合工艺实现的高性能锗锡(GeSn)多量子阱(MQW)光电二极管(PD)的首次演示。使用这种新结构的GeSn pd实现了创纪录的低泄漏25 mA/cm2。Ge p- finfet和n- finfet也在GeOI平台上实现,通过自上而下的处理方法,在该架构上实现了所有基于GeOI的光子元件与Ge CMOS的有前途的单片集成。这项工作为工作在$2\ \mu \text{m}$波段的先进光电集成电路(OEIC)铺平了道路,并使用GeSn作为通信和传感应用的光检测材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band
We report the first demonstration of high performance germanium-tin (GeSn) multiple-quantum-well (MQW) photodiode (PD) on a 200 mm GeOI platform realized using a low temperature wafer bonding process. Record-low leakage of 25 mA/cm2 was achieved for GeSn PDs using this new architecture. Both Ge p-and n-FinFETs were also realized on the GeOI platform to substantiate the promising monolithic integration of all GeOI-based photonics components with Ge CMOS on this architecture via top-down processing approach. This work paves way for advanced optoelectronic integrated circuits (OEIC) operating at $2\ \mu \text{m}$ band and beyond using GeSn as photo detection material for communication and sensing applications.
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