Shengqiang Xu, Kaizhen Han, Yi-Chiau Huang, Yuye Kang, S. Masudy‐Panah, Ying Wu, D. Lei, Yunshan Zhao, X. Gong, Y. Yeo
{"title":"高性能GeSn光电二极管在200毫米绝缘体上的Ge光子平台上,用于先进的光电集成与2 μm波段的Ge CMOS","authors":"Shengqiang Xu, Kaizhen Han, Yi-Chiau Huang, Yuye Kang, S. Masudy‐Panah, Ying Wu, D. Lei, Yunshan Zhao, X. Gong, Y. Yeo","doi":"10.23919/VLSIT.2019.8776554","DOIUrl":null,"url":null,"abstract":"We report the first demonstration of high performance germanium-tin (GeSn) multiple-quantum-well (MQW) photodiode (PD) on a 200 mm GeOI platform realized using a low temperature wafer bonding process. Record-low leakage of 25 mA/cm2 was achieved for GeSn PDs using this new architecture. Both Ge p-and n-FinFETs were also realized on the GeOI platform to substantiate the promising monolithic integration of all GeOI-based photonics components with Ge CMOS on this architecture via top-down processing approach. This work paves way for advanced optoelectronic integrated circuits (OEIC) operating at $2\\ \\mu \\text{m}$ band and beyond using GeSn as photo detection material for communication and sensing applications.","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"1 1","pages":"T176-T177"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band\",\"authors\":\"Shengqiang Xu, Kaizhen Han, Yi-Chiau Huang, Yuye Kang, S. Masudy‐Panah, Ying Wu, D. Lei, Yunshan Zhao, X. Gong, Y. Yeo\",\"doi\":\"10.23919/VLSIT.2019.8776554\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the first demonstration of high performance germanium-tin (GeSn) multiple-quantum-well (MQW) photodiode (PD) on a 200 mm GeOI platform realized using a low temperature wafer bonding process. Record-low leakage of 25 mA/cm2 was achieved for GeSn PDs using this new architecture. Both Ge p-and n-FinFETs were also realized on the GeOI platform to substantiate the promising monolithic integration of all GeOI-based photonics components with Ge CMOS on this architecture via top-down processing approach. This work paves way for advanced optoelectronic integrated circuits (OEIC) operating at $2\\\\ \\\\mu \\\\text{m}$ band and beyond using GeSn as photo detection material for communication and sensing applications.\",\"PeriodicalId\":6752,\"journal\":{\"name\":\"2019 Symposium on VLSI Technology\",\"volume\":\"1 1\",\"pages\":\"T176-T177\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIT.2019.8776554\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776554","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band
We report the first demonstration of high performance germanium-tin (GeSn) multiple-quantum-well (MQW) photodiode (PD) on a 200 mm GeOI platform realized using a low temperature wafer bonding process. Record-low leakage of 25 mA/cm2 was achieved for GeSn PDs using this new architecture. Both Ge p-and n-FinFETs were also realized on the GeOI platform to substantiate the promising monolithic integration of all GeOI-based photonics components with Ge CMOS on this architecture via top-down processing approach. This work paves way for advanced optoelectronic integrated circuits (OEIC) operating at $2\ \mu \text{m}$ band and beyond using GeSn as photo detection material for communication and sensing applications.