一种新的Mosfet栅极氧化物电容校准结构

Han Xiaojing
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摘要

本文介绍了一种新型的MOSFET栅极氧化物电容校准结构。在计算栅氧化电容时,采用这种新的校准结构消除了栅氧化电容的寄生互连电容。通过处理栅极氧化电容的测量数据和这种新的电容校准结构,我们可以更准确地得到栅极氧化电容的值,为SPICE模型和电路设计提供更准确的保证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
One New Calibration Structure of Mosfet Gate Oxide Capacitor
This paper introduces a new kind of calibration structure for MOSFET gate oxide capacitance. This new calibration structure is used to remove the parasitic interconnect capacitance from the gate oxide capacitor when calculate the gate oxide capacitance. By processing measured data of gate oxide capacitance and this new capacitance calibration structure, we can get the value of gate oxide capacitance more accurately, which provides a more accurate guarantee for SPICE model and circuit design.
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