高速延迟变化特性的负偏斜阴影寄存器

Jie Li, J. Lach
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引用次数: 24

摘要

集成电路(IC)技术缩放带来的工艺、电压和温度(PVT)可变性增加已经成为半导体行业的一个主要问题。为了改进制造工艺和开发电路设计技术以应对变异性,我们必须能够准确地描述发生的变化。在本文中,我们介绍了一种技术,通过测量具有负倾斜阴影寄存器的制造ic中设计人员控制的寄存器到寄存器延迟数来表征组合路径延迟变化。该技术允许使用与其他测试技术并行运行且与其他测试技术正交的高速测试来执行延迟测量,因此不会给测试过程增加组合复杂性。该技术可以在大量不可观察的内部组合路径上经济有效地实现,以获得关于延迟可变性的准确数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Negative-skewed shadow registers for at-speed delay variation characterization
The increased process, voltage, and temperature (PVT) variability that comes with integrated circuit (IC) technology scaling has become a major problem in the semiconductor industry. In order to refine manufacturing processes and develop circuit design techniques to cope with variability, we must be able to accurately and precisely characterize the variations that occur. In this paper, we introduce a technique for characterizing combinational path delay variations by measuring a designer-controlled number of register-to-register delays in manufactured ICs with negative-skewed shadow registers. This technique enables delay measurements to be performed with at-speed tests that are run in parallel with and are orthogonal to other testing techniques, and therefore does not add combinatorial complexity to the testing process. This technique can be implemented cost-effectively on a large number of otherwise unobservable internal combinational paths to get accurate, precise data about delay variability.
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