{"title":"1.55 /spl mu/m波长的晶圆熔接垂直腔双稳器件","authors":"F. Jeannès, J. Oudar, R. Azoulay, A. Ougazzaden","doi":"10.1109/CLEOE.1996.562401","DOIUrl":null,"url":null,"abstract":"Summary form only given. We have demonstrated a new vertical-cavity bistable device which exhibits all-optical switching at 1.55-/spl mu/m wavelength, with submilliwatt threshold and large contrast ratio. It was realized by wafer fusion of an InGaAsP/InP active heterostructure onto a AlAs/GaAs Bragg mirror. Finally the carrier-induced dispersive nonlinearity of the InGaAsP active layer has been investigated.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":"1 1","pages":"491-"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wafer-fused vertical-cavity bistable device at 1.55 /spl mu/m wavelength\",\"authors\":\"F. Jeannès, J. Oudar, R. Azoulay, A. Ougazzaden\",\"doi\":\"10.1109/CLEOE.1996.562401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. We have demonstrated a new vertical-cavity bistable device which exhibits all-optical switching at 1.55-/spl mu/m wavelength, with submilliwatt threshold and large contrast ratio. It was realized by wafer fusion of an InGaAsP/InP active heterostructure onto a AlAs/GaAs Bragg mirror. Finally the carrier-induced dispersive nonlinearity of the InGaAsP active layer has been investigated.\",\"PeriodicalId\":22169,\"journal\":{\"name\":\"Summaries of papers presented at the Conference on Lasers and Electro-Optics\",\"volume\":\"1 1\",\"pages\":\"491-\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Summaries of papers presented at the Conference on Lasers and Electro-Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOE.1996.562401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOE.1996.562401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wafer-fused vertical-cavity bistable device at 1.55 /spl mu/m wavelength
Summary form only given. We have demonstrated a new vertical-cavity bistable device which exhibits all-optical switching at 1.55-/spl mu/m wavelength, with submilliwatt threshold and large contrast ratio. It was realized by wafer fusion of an InGaAsP/InP active heterostructure onto a AlAs/GaAs Bragg mirror. Finally the carrier-induced dispersive nonlinearity of the InGaAsP active layer has been investigated.
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