碳纳米管缺陷免疫数字VLSI:常见问题更新

Hai Wei, Jie Zhang, Lan Wei, N. Patil, A. Lin, M. Shulaker, Hong-Yu Chen, H. Wong, S. Mitra
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引用次数: 10

摘要

碳纳米管场效应晶体管(cnfet)是设计高能效未来数字系统的优秀候选者。然而,碳纳米管(CNTs)本身就具有高度的缺陷,这对稳健的CNFET数字VLSI构成了主要障碍。本文通过一系列常见问题,总结了CNFET技术中常见的问题和关注。本文中讨论的具体问题是由我们在2009年设计自动化会议论文集中发表的关于常见问题的早期论文以来该领域的最新进展所激发的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Carbon nanotube imperfection-immune digital VLSI: Frequently asked questions updated
Carbon Nanotube Field-Effect Transistors (CNFETs) are excellent candidates for designing highly energy-efficient future digital systems. However, carbon nanotubes (CNTs) are inherently highly subject to imperfections that pose major obstacles to robust CNFET digital VLSI. This paper summarizes commonly raised questions and concerns about CNFET technology through a series of frequently asked questions. The specific questions addressed in this paper are motivated by recent advances in the field since the publication of our earlier paper on frequently asked questions in the Proceedings of the 2009 Design Automation Conference.
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