ONO在microFlash/sup /spl / reg/工艺流程的不同阶段充电

2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309951

M. Lisiansky, Y. Roizin, M. Gutman, S. Keysar, A. Ben-Guigui, M. Berreby

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引用次数: 0

摘要

在无场微闪存(NROM)存储阵列中，观察到过程中紫外(UV)激发的ONO(氧化物-氮化物-氧化物)堆叠充电。通过在D1介质中引入UV阻挡层来解决这个问题。本文讨论了解决收费问题的另一种方法。描述了一种微分区技术，该技术允许筛选出负责ONO充电和相应设备的操作。

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ONO charging at different stages of microFlash/sup /spl reg// process flow

In-process ultraviolet (UV) stimulated charging of ONO (oxide-nitride-oxide) stack is observed in fieldless microFlash (NROM) memory arrays. This problem is solved by introducing a UV blocking layer into the D1 dielectric. In this paper we discuss an alternative approach to the solution of charging problem. A micropartitioning technique is described that allows to screen out the operations responsible for ONO charging and corresponding equipment.

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来源期刊

2021 International Conference on IC Design and Technology (ICICDT)

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