Speed Performance Degradation of Electrooptic Modulator Devices by Neutrons Irradiations at High temperature Effects

In the present paper, we have deeply investigated the transmission efficiency degradation of electrooptic modulator devices in thermal irradiated hard environments over wide range of the operating parameters. It is well known that the radiation-induced electrooptic modulator defects can modify the initial doping concentrations, creating generation-recombination centres and introducing trapping of carriers. Additionally, rate of the lattice defects is thermally activated and reduces for increasing irradiation temperature as a result of annealing of the damage. Both the ambient temperature and the irradiation dose possess sever effects on the electro-optical characteristics and consequently the performance characteristics of electroptic modulator devices. As well as we have deeply developed the modelling basics of electrooptic modulator devices, which may be used to analyzed the modulator quantum efficiency, dark current, modulating voltage, modulating frequency, 3-dB bandwidth, transmitted signal bandwidth, modulator quality factor, modulator sensitivity, modulator sensitivity bandwidth product, switching voltage, modulator device performance index, operating switching time and speed response of these irradiated electrooptic modulator devices after different irradiation fluences.