{"title":"磷在硅-i-n光电二极管制造技术中的扩散","authors":"M. Kukurudziak","doi":"10.15407/spqeo25.04.385","DOIUrl":null,"url":null,"abstract":"Comparative characterization of phosphorus diffusion from planar sources and liquid-phase diffusion by using PCl3 in technology for manufacturing silicon p-i-n photodiodes was carried out. The quantitative analysis of dislocations formed when using different variants and modes of diffusion has been performed. The influence of dislocation number on the dark current density and responsivity of photodetectors has been studied. A table has been given for estimation of surface resistance with account of colour inherent to phosphorosilicate glass after doping phosphorus into the surface layer.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"59 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes\",\"authors\":\"M. Kukurudziak\",\"doi\":\"10.15407/spqeo25.04.385\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Comparative characterization of phosphorus diffusion from planar sources and liquid-phase diffusion by using PCl3 in technology for manufacturing silicon p-i-n photodiodes was carried out. The quantitative analysis of dislocations formed when using different variants and modes of diffusion has been performed. The influence of dislocation number on the dark current density and responsivity of photodetectors has been studied. A table has been given for estimation of surface resistance with account of colour inherent to phosphorosilicate glass after doping phosphorus into the surface layer.\",\"PeriodicalId\":21598,\"journal\":{\"name\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"volume\":\"59 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo25.04.385\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo25.04.385","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes
Comparative characterization of phosphorus diffusion from planar sources and liquid-phase diffusion by using PCl3 in technology for manufacturing silicon p-i-n photodiodes was carried out. The quantitative analysis of dislocations formed when using different variants and modes of diffusion has been performed. The influence of dislocation number on the dark current density and responsivity of photodetectors has been studied. A table has been given for estimation of surface resistance with account of colour inherent to phosphorosilicate glass after doping phosphorus into the surface layer.
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