“(照片)测定tio2基纳米材料能带边缘位置的电化学方法”的勘误表

Advances in Physical Chemistry Pub Date : 2016-04-28 DOI:10.1155/2016/8235954

R. Beranek

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引用次数: 4

摘要

题为“(照片)电化学方法测定tio2基纳米材料带边位置”的论文[1]在图3(b)中包含一个错误，其中半导体的功函数ΦS应该被描述为半导体费米能级与半导体表面外的局部真空能级之间的能量差。更正后的图3如下所示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Corrigendum to “(Photo)electrochemical Methods for the Determination of the Band Edge Positions of TiO2-Based Nanomaterials”

The paper titled “(Photo)electrochemical Methods for the Determination of the Band Edge Positions of TiO 2 -Based Nanomaterials” [1] contains an error in Figure 3(b) where the work function of the semiconductor, ΦS, should be depicted as the energy difference between the semiconductor Fermi level and the local vacuum level just outside the semiconductor surface. The corrected Figure 3 is shown as follows.

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Advances in Physical Chemistry

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