无结与无掺杂场效应晶体管模拟/射频性能比较

2017 International Conference on Computer, Communications and Electronics (Comptelix) Pub Date : 2017-07-01 DOI:10.1109/COMPTELIX.2017.8004041

Chitrakant Sahu, Jaydeep Singh Parmar

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引用次数: 3

摘要

本文利用计算机辅助设计(TCAD)工具对模拟和射频应用中的无结(JL)和无掺杂(DL)场效应晶体管(fet)的器件性能指标进行了评价。与JL-FET相比，DL-FET的导通电流增强了17%，截止频率提高了1.5倍，固有电压增益提高了10 dB。因此，DL-FET通过同时提高增益和带宽来减轻权衡，与器件相比，其制造复杂性更低。

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Analog/RF performance comparison of junctionless and dopingless field effect transistor

In this paper, device performance metricsofjunctionless (JL) and dopingless (DL) field effect transistors (FETs) for analog and radio-frequency application are evaluated using technology computer added design (TCAD) tool. It is observed that the DL-FET offers 17% enhancement in ON-current and achieves 1.5 times cutoff frequency along with 10 dB improvement in intrinsic voltage gain in comparison to JL-FET. Hence, DL-FET alleviates the trade-off by simultaneous improvement in gain and bandwidth with less fabrication complexity compare to its device counterpart.

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来源期刊

2017 International Conference on Computer, Communications and Electronics (Comptelix)

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