发布求助
文献互助 智能选刊 最新文献

铟磷基材料干蚀刻工艺研究进展

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147346
U. Niggebrugge
{"title":"铟磷基材料干蚀刻工艺研究进展","authors":"U. Niggebrugge","doi":"10.1109/ICIPRM.1991.147346","DOIUrl":null,"url":null,"abstract":"The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"17 1","pages":"246-251"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Recent advances in dry etching processes for InP-based materials\",\"authors\":\"U. Niggebrugge\",\"doi\":\"10.1109/ICIPRM.1991.147346\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"17 1\",\"pages\":\"246-251\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147346\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

综述了铟磷基材料高质量干法蚀刻技术的进展，包括工艺损伤方面的最新研究成果。讨论了原位刻蚀深度控制的方法，并列举了采用干刻蚀技术制备器件的实例。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
分享
查看原文 本刊更多论文
Recent advances in dry etching processes for InP-based materials
The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented.<>
求助全文
通过发布文献求助，成功后即可免费获取论文全文。 去求助
来源期刊
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信