采用高k介电体改善SiC二极管击穿性能

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Teatro e Storia Pub Date : 2005-12-19 DOI:10.1109/SMICND.2005.1558799

G. Brezeanu, M. Badila, M. Brezeanu, F. Udrea, C. Boianceanu, I. Enache, F. Draghici, A. Visioreanu

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摘要

场极板技术的经典实现是氧化斜坡端接。本文介绍了使用高k介电体获得的SiC肖特基势垒二极管的端接效率的改进。研究了相对介电常数和斜坡参数对穿孔和非穿孔器件的影响。确定了最优结构终止参数

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Breakdown performances improvements of SiC diodes using high-k dielectrics

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the efficiency of this termination for SiC Schottky barrier diodes, obtained by using high-k dielectrics. The effect of the relative dielectrics permittivity and ramp parameters are investigated for punch-through and non punch-through devices. Optimal structure termination parameters were identified

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Teatro e Storia THEATER-

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