用于芯片级光子互连的高速硅锗光电探测器

D. Benedikovic, G. Aubin, L. Virot, J. Hartmann, F. Amar, X. Roux, C. Alonso‐Ramos, E. Cassan, D. Marris-Morini, F. Boeuf, J. Fédéli, C. Kopp, B. Szelag, L. Vivien
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引用次数: 0

摘要

我们介绍了基于p-i-n硅-锗-硅异质结构的紧凑型光电探测器的最新进展。我们展示了可靠的高速性能,表明这些器件可能成为下一代光子互连的关键组成部分。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-speed silicon-germanium photodetectors for chip-scale photonic interconnects
We present our latest advances in the development of compact photodetectors based on p-i-n silicon-germanium-silicon hetero-structures. We demonstrate credible high-speed performances, showing that those devices are likely to become key building blocks in next-generation photonic interconnects.
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